Room-temperature pulsed operation of 1.5-mu m vertical cavity lasers with an InP-based Bragg reflector

被引：34

作者：

Streubel, K ^{[1
]}

Rapp, S ^{[1
]}

Andre, J ^{[1
]}

Wallin, J ^{[1
]}

机构：

[1] ERICSSON COMPONENTS,S-16440 KISTA,SWEDEN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 09期

关键词：

D O I：

10.1109/68.531809

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a 1.5-mu m vertical-cavity laser that utilizes one GaInAsP-InP and one Si-SiO2 mirror in combination with a strain-compensated GaInAsP quantum-well active layer. Pulsed lasing operation was achieved in a temperature range from -160 to +43 degrees C, The lasers exhibit 30-mA pulsed threshold current at room temperature, CW operation was obtained up to -25 degrees C.

引用

收藏

页码：1121 / 1123

页数：3

相关论文

共 15 条

[1] NEAR ROOM-TEMPERATURE CONTINUOUS-WAVE LASING CHARACTERISTICS OF GAINASP/INP SURFACE-EMITTING LASER [J].

BABA, T ;

YOGO, Y ;

SUZUKI, K ;

KOYAMA, F ;

IGA, K .

ELECTRONICS LETTERS, 1993, 29 (10) :913-914

[2]

BABIC D, 1995, IEEE PHOTONIC TECH L, V11, P1225

[3]

BABIC D, 1992, IEEE J QUANTUM ELECT, V27, P514

[4] DOUBLE-FUSED 1.52-MU-M VERTICAL-CAVITY LASERS [J].

BABIC, DI ;

DUDLEY, JJ ;

STREUBEL, K ;

MIRIN, RP ;

BOWERS, JE ;

HU, EL .

APPLIED PHYSICS LETTERS, 1995, 66 (09) :1030-1032

[5]

BABIC DI, 1995, THESIS U CALIFORNIA

[6] LOW-THRESHOLD 1.57-MU-M VC-SELS USING STRAIN-COMPENSATED QUANTUM-WELLS AND OXIDE METAL BACKMIRROR [J].

CHUA, CL ;

ZHU, ZH ;

LO, YH ;

BHAT, R ;

HONG, M .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (05) :444-446

[7] LOW-THRESHOLD, WAFER FUSED LONG-WAVELENGTH VERTICAL-CAVITY LASERS [J].

DUDLEY, JJ ;

BABIC, DI ;

MIRIN, R ;

YANG, L ;

MILLER, BI ;

RAM, RJ ;

REYNOLDS, T ;

HU, EL ;

BOWERS, JE .

APPLIED PHYSICS LETTERS, 1994, 64 (12) :1463-1465

[8] 144-DEGREES-C OPERATION OF 1.3 MU-M INGAASP VERTICAL CAVITY LASERS ON GAAS SUBSTRATES [J].

DUDLEY, JJ ;

ISHIKAWA, M ;

BABIC, DI ;

MILLER, BI ;

MIRIN, R ;

JIANG, WB ;

BOWERS, JE ;

HU, EL .

APPLIED PHYSICS LETTERS, 1992, 61 (26) :3095-3097

[9]

FISCHER MA, 1995, IEEE PHOTONIC TECH L, V7, P608

[10] GAINASP/INP SEMICONDUCTOR MULTILAYER REFLECTOR GRWON BY METALORGANIC CHEMICAL VAPOR-DEPOSITION AND ITS APPLICATION TO SURFACE EMITTING LASER DIODE [J].

IMAJO, Y ;

KASUKAWA, A ;

KASHIWA, S ;

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (07) :L1130-L1132