+55°C pulse lasing at 1.56 μm of all-monolithic InGaAlAs/InP vertical cavity lasers

被引：12

作者：

Kazmierski, C

Debray, JP

Madani, R

Sagnes, I

Ougazzaden, A

Bouadma, N

Etrillard, J

Alexandre, F

Quillec, M

机构：

[1] OPTO & Grp Interet Econ, F-91460 Marcoussis, France

[2] EMCORE Corp, Somerset, NJ 08873 USA

[3] France Telecom, CNET, Bagneux Lab, F-92220 Bagneux, France

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 10期

关键词：

D O I：

10.1049/el:19990533

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using an InP lattice matched InGaAlAs/InAlAs system, an all-monolithic vertical laser structure has been grown. Pulsed lasing at 1.56 mu m has been obtained up to +55 degrees C with 45 mu m diameter proton-implanted diodes. A thermal resistance of similar to 420 K/W has been estimated. The reported characterisations indicate the potential of this system laser for CW operation and for simple large-scale processing.

引用

页码：811 / 812

页数：2

共 4 条

[1] Monolithic vertical cavity device lasing at 1.55 mu m in InGaAlAs system [J].