REFRACTIVE-INDEXES OF (AL, GA, IN)AS EPILAYERS ON INP FOR OPTOELECTRONIC APPLICATIONS

MBE grown bulk and short period superlattices of (Al,Ga,In)As epilayers lattice matched to InP were characterized by double-crystal diffractometry and low-temperature photoluminescence. A reflection spectroscopy technique was used to determine the refractive index of (Al,Ga,In)As films as a function of wavelength. The measured data were fitted to a single-oscillator dispersion model and the model coefficients are given. The resulting expression can be used in the design of waveguides, modulators, and other optical devices.