GROWTH AND CHARACTERIZATION OF ALGAINAS LATTICE MATCHED TO INP GROWN BY MOLECULAR-BEAM EPITAXY

被引：36

作者：

PRASEUTH, JP

JONCOUR, MC

GERARD, JM

HENOC, P

QUILLEC, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 02期

关键词：

D O I：

10.1063/1.340252

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：400 / 403

页数：4

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[1] OPTICALLY PUMPED 1.55-MU-M DOUBLE HETEROSTRUCTURE GAXALYIN1-X-YAS/ALUIN1-UAS LASERS GROWN BY MOLECULAR-BEAM EPITAXY
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[2] PREPARATION AND PROPERTIES OF MOLECULAR-BEAM EPITAXY GROWN (AL0.5GA0.5)0.48IN0.52AS
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[3] MOLECULAR-BEAM EPITAXY OF GASB0.5AS0.5 AND ALXGA1-XSBYAS1-Y LATTICE MATCHED TO INP
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[4] MBE GROWTH OF INGAALAS LATTICE-MATCHED TO INP BY PULSED MOLECULAR-BEAM METHOD
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[5] MOLECULAR-BEAM EPITAXY GROWTH OF IN0.53(GAXAL1-X)0.47AS QUATERNARY LAYERS FOR OPTOINTEGRATED DEVICES
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[6] MBE GROWTH OF ALXGAYIN1-X-YAS FOR A DHBT STRUCTURE
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[7] COMPOSITION MODULATION IN LIQUID-PHASE EPITAXIAL INXGA1-XASYP1-Y LAYERS LATTICE MATCHED TO INP SUBSTRATES
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[8] INGAAS-INALGAAS HOT-ELECTRON TRANSISTORS WITH CURRENT GAIN OF 15
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[9] PREPARATION OF (ALXGA1-X)YIN1-YAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.5,Y = 0.47) LATTICE MATCHED TO INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY
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[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7558 - 7560
[10] COMPOSITIONAL DEPENDENCE OF BAND-GAP ENERGY AND CONDUCTION-BAND EFFECTIVE MASS OF IN1-X-YGAXALY AS LATTICE MATCHED TO INP
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