CONTINUOUS-WAVE GAINASP/INP SURFACE-EMITTING LASERS WITH A THERMALLY CONDUCTIVE MGO/SI MIRROR

被引：10

作者：

BABA, T ^{[1
]}

YOGO, Y ^{[1
]}

SUZUKI, K ^{[1
]}

KOYAMA, F ^{[1
]}

IGA, K ^{[1
]}

机构：

[1] YOKOHAMA NATL UNIV,DIV ELECT & COMP ENGN,HODOGAYA KU,YOKOHAMA,KANAGAWA 240,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 4A期

关键词：

SEMICONDUCTOR LASER; SURFACE EMITTING LASER; GAINASP/INP; OPTICAL COMMUNICATION; LONG WAVELENGTH; CIRCULAR BURIED HETEROSTRUCTURE; DIELECTRIC MIRROR;

D O I：

10.1143/JJAP.33.1905

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated continuous wave (cw) GaInAsP/InP vertical-cavity surface emitting lasers. For effective carrier confinement, we employed a planar buried heterostructure grown by a single-step maskless regrowth process. In addition, we introduced a novel multilayer mirror consisting of magnesia (MgO) and silicon (Si), which provides high reflectivity and high thermal conductivity simultaneously. Both threshold reduction and improvement of the highest cw temperature were clearly demonstrated by this new mirror; the highest cw temperature of 14-degrees-C was achieved with the threshold current of 22 mA. From the comparison of threshold current between cw and pulsed conditions, the increase of device temperature by the cw injection was estimated to be 8-15 K.

引用

页码：1905 / 1909

页数：5

共 18 条

[1] NEAR ROOM-TEMPERATURE CONTINUOUS-WAVE LASING CHARACTERISTICS OF GAINASP/INP SURFACE-EMITTING LASER [J].