GAINASP/INP LOW-MESA CPBH SURFACE-EMITTING LASER WITH AN OPTIMALLY DEPOSITED MGO/SI MULTILAYER LASER MIRROR

被引：1

作者：

BABA, T

YOGO, Y

SUZUKI, K

IGA, K

KOYAMA, F

机构：

[1] Tokyo Institute of Technology, Precision and Intelligence Laboratory, Midori-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 6A期

关键词：

SEMICONDUCTOR LASER; SURFACE EMITTING LASER; GAINASP/INP; OPTICAL COMMUNICATION; LONG WAVELENGTH; CIRCULAR BURIED HETEROSTRUCTURE; DIELECTRIC MIRROR;

D O I：

10.1143/JJAP.32.2692

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

With an eye to high-temperature cw operation of GaInAsP/InP surface emitting lasers, we have introduced a low-mesa circular planar buried heterostructure for current confinement and a thermally conductive MgO/Si multilayer mirror for heat sinking. The deposition conditions of MgO were optimized to obtain a high mirror reflectivity of over 99%. The lasing operation of a 1.3 mum device loaded with these new materials was demonstrated with a low threshold of 3.5 mA at 77 K under the cw condition.

引用

页码：2692 / 2694

页数：3

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