A LOW-THRESHOLD 1.3 MU-M GAINASP/INP FLAT-SURFACE CIRCULAR BURIED HETEROSTRUCTURE SURFACE EMITTING LASER

被引：3

作者：

BABA, T

MATSUOKA, K

KOYAMA, F

IGA, K

机构：

[1] Tokyo Institute of Technology, Precision and Intelligence Laboratory, Midori-ku, Yokohama, 227

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 3A期

关键词：

SEMICONDUCTOR LASER; SURFACE EMITTING LASER; GALNASP ON INP; OPTICAL COMMUNICATION; LONG WAVELENGTH; CIRCULAR BURIED HETEROSTRUCTURE; DIELECTRIC MIRROR;

D O I：

10.1143/JJAP.32.1126

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The liquid phase epitaxy regrowth process of the GaInAsP/InP flat-surface circular buried heterostructure (FCBH) has been improved and a perfectly buried microsize active region of 8 mum in diameter and 1.2 mum in depth was realized with good reproduclbility. Low-threshold (I(th) = 52 mA) lasing operation of a 1.3-mum-range FCBH surface emitting laser with a pair of dielectric micromirrors was achieved in a pulsed condition at 0-degrees-C.

引用

页码：1126 / 1127

页数：2

共 7 条

[1] SURFACE EMITTING SEMICONDUCTOR-LASERS [J].