High-performance programmable memory devices based on hyperbranched copper phthalocyanine polymer thin films

被引：137

作者：

Choi, Seungchel ^{[1
,2
]}

Hong, Sang-Hyun ^{[3
]}

Cho, Shin Hyo ^{[1
,2
]}

Park, Samdae ^{[1
,2
]}

Park, Su-Moon ^{[1
,2
]}

Kim, Ohyun ^{[3
]}

Ree, Moonhor ^{[1
,2
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Chem,Polymer Res Inst, Natl Res Lab Polymer Synth & Phys, Natl Ctr Nanomat Technol,Ctr Integrated Mol Syst, Pohang 790784, South Korea

[2] Pohang Univ Sci & Technol, BK Sch Mol Sci, Pohang 790784, South Korea

[3] Pohang Univ Sci & Technol, Dept Elect & Elect Engn, Pohang 790784, South Korea

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 09期

关键词：

D O I：

10.1002/adma.200702147

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Electrically programmable fuse-type polymer memory devices based on hyperbranched copper phthalocyanine polymer thin films are fabricated. The devices have novel write-once-read-many (WORM) memory characteristics, with a high ON/OFF current ratio (of 10(6)) and a high electrical stability, thus opening up the possibility of a low-cost mass production of high-performance, nonvolatile polymer memory devices.

引用

页码：1766 / +

页数：7

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