Crystallization process of transparent conductive oxides ZnkIn2Ok+3

被引：9

作者：

Moriga, T

Fukushima, A

Tominari, Y

Hosokawa, S

Nakabayashi, I

Tominaga, K

机构：

[1] Univ Tokushima, Fac Engn, Dept Chem Sci & Technol, Tokushima 7708506, Japan

[2] Univ Tokushima, Fac Engn, Dept Elect & Elect Engn, Tokushima 7708506, Japan

来源：

JOURNAL OF SYNCHROTRON RADIATION | 2001年 / 8卷

关键词：

homologous compounds; crystallization process; transparent conductive oxides;

D O I：

10.1107/S0909049500018264

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Crystallization process of the homologous compounds ZnkIn2Ok+3 from the coprecipitants was examined by XAFS spectroscopy and X-ray diffractometry. Interesting crystallization behavior could be observed. Though zinc oxide already crystallized as the wurtzite-type ZnO at 573K, indium oxide remained amorphous. Subsequently bixbyite-type In2O3 appeared at 873K for k=5 and 7 and at below 773K for the other k-members, respectively. The In-O distance in the amorphous In2O3 was a little shorted than that in the bixbyite-type In2O3 by 0.06-7 Angstrom. The distance remained constant but abruptly increased to that observed in the bixbyite-type In2O3 in accordance with the progress of crystallization. Then the distance gradually decreased and converged to ca. 2.12 Angstrom at the temperature range of 1173-1373K, due to the reaction between In2O3 and ZnO to form the homologous compound.

引用

页码：785 / 787

页数：3

共 10 条

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