Band-gap bowing in Ga1-xInxN alloys

被引:17
作者
Lambrecht, WRL
机构
关键词
D O I
10.1016/S0038-1101(96)00165-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The band-gap bowing in Ga1-xInxN is studied by means of linear muffin-tin orbital band structure calculations within the local density functional approach. A ''virtual crystal''-like approximation is compared with the Connolly-Williams cluster expansion approach with and without volume and bond-length relaxations. A progressively stronger bowing is found as the physical model's complexity is increased. The final bowing parameter obtained is 2.6 eV, which is significantly larger than the value reported in the literature. (C) 1997 Elsevier Science Ltd.
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页码:195 / 199
页数:5
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