Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

被引：24

作者：

Lee, CD ^{[1
]}

Ramachandran, V

Sagar, A

Feenstra, RM

Greve, DW

Sarney, WL

Salamanca-Riba, L

Look, DC

Bai, S

Choyke, WJ

Devaty, RP

机构：

[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[2] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA

[3] Univ Maryland, Mat & Nucl Engn Dept, College Pk, MD 20742 USA

[4] Wright State Univ, Dayton, OH 45435 USA

[5] USAF, Res Lab, Dayton, OH 45435 USA

[6] Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA

[7] IBM Microelect, Essex Jct, VT 05452 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2001年 / 30卷 / 03期

基金：

美国国家科学基金会;

关键词：

GaN; SiC; molecular beam epitaxy; dislocation density; scanning tunneling microscopy;

D O I：

10.1007/s11664-001-0010-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The structural, electrical, and optical properties of GaN grown on 6H-SiC(0001) substrates by molecular beam epitaxy are studied. Suitable substrate preparation and growth conditions are found to greatly improve the structural quality of the films. Threading dislocation densities of about 3 x 10(9) cm(-2) for edge dislocations and < 1 x 10(6) cm(-2) for screw dislocations are achieved in GaN films of 0.8 <mu>m thickness. Mechanisms of dislocation generation and annihilation are discussed. Increasing the Ga to N flux ratio used during growth is found to improve the surface morphology, An unintentional electron concentration in the films of about 5 x 10(17) cm(-3) is observed, and is attributed to excess Si in the films due to a Si-cleaning step used in the substrate preparation, Results from optical characterization are correlated with the structural and electronic studies.

引用

页码：162 / 169

页数：8

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