Surface morphology evolution during the overgrowth of large InAs-GaAs quantum dots

被引：88

作者：

Joyce, PB ^{[1
]}

Krzyzewski, TJ ^{[1
]}

Bell, GR ^{[1
]}

Jones, TS ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Chem, Ctr Elect Mat & Devices, London SW7 2AY, England

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 22期

关键词：

D O I：

10.1063/1.1420579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of GaAs overgrowth on the structural properties of large low-growth-rate InAs quantum dots (LGR-QDs) grown on GaAs(001) are examined using in situ scanning tunneling microscopy. Strongly anisotropic surface diffusion produces a characteristic valley-ridge structure above the LGR-QDs and the surface is not planarized even after a cap thickness > 400 Angstrom. The evolution of surface morphology proceeds very differently to the case of smaller conventional growth rate QDs capped under the same conditions, due to the different initial strain states of the QDs. (C) 2001 American Institute of Physics.

引用

页码：3615 / 3617

页数：3

共 20 条

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