Self-assembled InSb quantum dots grown on GaSb:: A photoluminescence, magnetoluminescence, and atomic force microscopy study

被引：68

作者：

Alphandéry, E ^{[1
]}

Nicholas, RJ

Mason, NJ

Zhang, B

Möck, P

Booker, GR

机构：

[1] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England

[2] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 14期

关键词：

D O I：

10.1063/1.123750

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a study of self-assembled quantum dots (QDs) of InSb embedded in a GaSb matrix grown by metalorganic vapor phase deposition. Growth temperatures and deposition times have been optimized for maximal photoluminescence peak intensities. Photoluminescence (PL), magneto-PL, and atomic force microscopy (AFM) have been performed to estimate the size of the QDs. The quantum dots luminesce in the midinfrared at around 0.73 eV. The application of magnetic fields up to 15 T both parallel and perpendicular to the growth direction enhanced the wetting layer and bulk PL intensity and enabled an estimate to be made of the QD height and widths as 2-4 and 20-30 nm, respectively. These sizes were confirmed by AFM. (C) 1999 American Institute of Physics. [S0003-6951(99)04412-5].

引用

页码：2041 / 2043

页数：3

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