Increasing the coherence time of single electron spins in diamond by high temperature annealing

被引：110

作者：

Naydenov, Boris ^{[1
,2
]}

Reinhard, Friedemann ^{[1
,2
]}

Laemmle, Anke ^{[1
,2
]}

Richter, V. ^{[3
]}

Kalish, Rafi ^{[3
]}

D'Haenens-Johansson, Ulrika F. S. ^{[4
]}

Newton, Mark ^{[4
]}

Jelezko, Fedor ^{[1
,2
]}

Wrachtrup, Joerg ^{[1
,2
]}

机构：

[1] Univ Stuttgart, Inst Phys 3, D-70659 Stuttgart, Germany

[2] Univ Stuttgart, Res Ctr SCoPE, D-70659 Stuttgart, Germany

[3] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel

[4] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 24期

关键词：

COUPLED ELECTRON; CENTERS; DEFECT;

D O I：

10.1063/1.3527975

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Negatively charged nitrogen-vacancy (NV(-)) centers in diamond produced by ion implantation often show properties different from NVs created during the crystal growth. We observe that NVs created from nitrogen ion implantation at 30-300 keV show much shorter electron spin coherence time T(2) as compared to the "natural" NVs and about 20% of them show switching from NV-to NV(0). We show that annealing the diamond at T=1200 degrees C substantially increases T2 and at the same time the fraction of NVs converting from NV-to NV(0) is greatly reduced. (C) 2010 American Institute of Physics. [doi:10.1063/1.3527975]

引用

页数：3

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