High mobility C60 organic field-effect transistors

被引：12

作者：

Haddock, NJ ^{[1
]}

Domercq, B ^{[1
]}

Kippelen, B ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Ctr Organ Photon & Elect, Atlanta, GA 30332 USA

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 07期

关键词：

D O I：

10.1049/el:20057199

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Organic field-effect transistors incorporating the electron transport material C-60 as the active semiconductor have been fabricated under high vacuum conditions and tested in a nitrogen atmosphere at ambient pressure. The maximum field-effect mobility was found to be 0.65 cm(2)/Vs, comparable to the state-of-the-art value measured under ultra-high-vacuum conditions.

引用

页码：444 / 446

页数：3

共 13 条

[1] Organic thin film transistors based on N-alkyl perylene diimides:: Charge transport kinetics as a function of gate voltage and temperature [J].

Chesterfield, RJ ;

McKeen, JC ;

Newman, CR ;

Ewbank, PC ;

da Silva, DA ;

Brédas, JL ;

Miller, LL ;

Mann, KR ;

Frisbie, CD .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (50) :19281-19292

[2]

Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO

[3]

2-9

[4] MOBILITY OF CHARGE-CARRIERS IN VAPOR-PHASE GROWN C-60 SINGLE-CRYSTAL [J].

FRANKEVICH, E ;

MARUYAMA, Y ;

OGATA, H .

CHEMICAL PHYSICS LETTERS, 1993, 214 (01) :39-44

[5]

FRIEND RH, 1996, SYNTHETIC MET, V77, P35

[6] C-60 THIN-FILM TRANSISTORS [J].

HADDON, RC ;

PEREL, AS ;

MORRIS, RC ;

PALSTRA, TTM ;

HEBARD, AF ;

FLEMING, RM .

APPLIED PHYSICS LETTERS, 1995, 67 (01) :121-123

[7] Passivation effects of alumina insulating layer on C60 thin-film field-effect transistors [J].

Horiuchi, K ;

Nakada, K ;

Uchino, S ;

Hashii, S ;

Hashimoto, A ;

Aoki, N ;

Ochiai, Y ;

Shimizu, M .

APPLIED PHYSICS LETTERS, 2002, 81 (10) :1911-1912

[8] Effect of impurities on the mobility of single crystal pentacene [J].

Jurchescu, OD ;

Baas, J ;

Palstra, TTM .

APPLIED PHYSICS LETTERS, 2004, 84 (16) :3061-3063

[9] N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit [J].

Kanbara, T ;

Shibata, K ;

Fujiki, S ;

Kubozono, Y ;

Kashino, S ;

Urisu, T ;

Sakai, M ;

Fujiwara, A ;

Kumashiro, R ;

Tanigaki, K .

CHEMICAL PHYSICS LETTERS, 2003, 379 (3-4) :223-229

[10] Recent progress in organic electronics: Materials, devices, and processes [J].

Kelley, TW ;

Baude, PF ;

Gerlach, C ;

Ender, DE ;

Muyres, D ;

Haase, MA ;

Vogel, DE ;

Theiss, SD .

CHEMISTRY OF MATERIALS, 2004, 16 (23) :4413-4422

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