Structural and electrical properties of Au and Ti/Au contacts to n-type GaN

被引：20

作者：

Dobos, L. ^{[1
]}

Pecz, B. ^{[1
]}

Toth, L. ^{[1
]}

Horvath, Zs. J. ^{[1
]}

Horvath, Z. E. ^{[1
]}

Beaumont, B. ^{[2
]}

Bougrioua, Z. ^{[3
]}

机构：

[1] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary

[2] LUMILOG, F-06220 Vallauris, France

[3] CNRS, CRHEA, F-06560 Valbonne, France

来源：

VACUUM | 2008年 / 82卷 / 08期

基金：

匈牙利科学研究基金会;

关键词：

GaN; thin films; electron microscopy; solid phase reaction; electrical properties;

D O I：

10.1016/j.vacuum.2007.11.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Au and Ti/Au layers were deposited on n-GaN. The samples were annealed at 400, 700 and 900 degrees C for 10 min in vacuum. The contacts were rectifying up to 700 degrees C and the highest Schottky barrier height of 1.07 eV was obtained for an Au single layer by current-voltage measurements. A binary phase of Au2Ga was identified at the interface of the n-GaN/Ti/Au contact after annealing at 900 degrees C. The formation of Ti2N and TiN (twin) phases epitaxially grown on GaN was also observed in the same contact as well as some gold diffusion into the topmost region of the GaN epilayer. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：794 / 798

页数：5

共 18 条

[1]

BARNA A, 1997, HDB MICROSCOPY, V3, P751

[2] EXTRACTION OF SCHOTTKY DIODE PARAMETERS FROM FORWARD CURRENT-VOLTAGE CHARACTERISTICS [J].

CHEUNG, SK ;

CHEUNG, NW .

APPLIED PHYSICS LETTERS, 1986, 49 (02) :85-87

[3] Very low resistance multilayer ohmic contact to n-GaN [J].

Fan, ZF ;

Mohammad, SN ;

Kim, W ;

Aktas, O ;

Botchkarev, AE ;

Morkoc, H .

APPLIED PHYSICS LETTERS, 1996, 68 (12) :1672-1674

[4] METAL CONTACTS TO GALLIUM NITRIDE [J].

FORESI, JS ;

MOUSTAKAS, TD .

APPLIED PHYSICS LETTERS, 1993, 62 (22) :2859-2861

[5]

Frayssinet E, 2002, MRS INTERNET J N S R, V7

[6] Leakage mechanism in GaN and AlGaN schottky interfaces [J].

Hashizume, T ;

Kotani, J ;

Hasegawa, H .

APPLIED PHYSICS LETTERS, 2004, 84 (24) :4884-4886

[7] Modification of Al/Si interface and Schottky barrier height with chemical treatment [J].

Horváth, ZJ ;

Adám, M ;

Szabó, I ;

Serényi, M ;

Van Tuyen, V .

APPLIED SURFACE SCIENCE, 2002, 190 (1-4) :441-444

[8] Analysis of I-V measurements on CrSi2-Si Schottky structures in a wide temperature range - Comment [J].

Horvath, ZJ .

SOLID-STATE ELECTRONICS, 1996, 39 (01) :176-178

[9] Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN [J].

Liu, Y ;

Kauser, MZ ;

Nathan, MI ;

Ruden, PP ;

Dogan, S ;

Morkoç, H ;

Park, SS ;

Lee, KY .

APPLIED PHYSICS LETTERS, 2004, 84 (12) :2112-2114

[10] Temperature and doping-dependent resistivity of Ti/Au/Pd/Au multilayer ohmic contact to n-GaN [J].

Lu, CZ ;

Chen, HN ;

Lv, XL ;

Xie, XS ;

Mohammad, SN .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (11) :9218-9224

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