Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN

被引：45

作者：

Liu, Y ^{[1
]}

Kauser, MZ

Nathan, MI

Ruden, PP

Dogan, S

Morkoç, H

Park, SS

Lee, KY

机构：

[1] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA

[2] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA

[3] Samsung Adv Inst Technol, Suwon, South Korea

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 12期

关键词：

D O I：

10.1063/1.1689392

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report measurements of the Schottky barrier heights of Ni/Au contacts on Ga-polarity and N-polarity n-GaN under hydrostatic pressure and applied in-plane uniaxial stress. Under hydrostatic pressure the two different polarities of GaN yield significantly different rates of Schottky barrier height increase with increasing pressure. Uniaxial stress parallel to the surface affects the Schottky barrier height only minimally. The observed changes in barrier height under stress are attributed to a combination of band structure and piezoelectric effects. (C) 2004 American Institute of Physics.

引用

页码：2112 / 2114

页数：3

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