BARRIER HEIGHT CHANGE IN GAAS SCHOTTKY DIODES INDUCED BY PIEZOELECTRIC EFFECT

被引：45

作者：

CHUNG, KW

WANG, Z

COSTA, JC

WILLIAMSON, F

RUDEN, PP

NATHAN, MI

机构：

[1] Department of Electrical Engineering, University of Minnesota, Minneapolis

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 10期

关键词：

D O I：

10.1063/1.105499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel manifestation of piezoelectric effects in GaAs has been observed. The change of barrier height, phi-B, of Schottky diodes induced by uniaxial stresses, S, along <100>, <011>, <011BAR>, and <111> has been measured. Shifts in phi-B due to the appearance of piezoelectric polarization charges at the semiconductor-metal interface for directions other than <100> are observed.

引用

页码：1191 / 1193

页数：3

共 13 条

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