UNIAXIAL-STRESS DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS IN GAAS-ALXGA1-XAS-GAAS HETEROJUNCTION BARRIERS

被引:11
作者
LU, SS [1 ]
LEE, K [1 ]
NATHAN, MI [1 ]
HEIBLUM, M [1 ]
WRIGHT, SL [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.101648
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:1336 / 1338
页数:3
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共 20 条
[1]   GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].
ADACHI, S .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29
[2]   CONNECTION RULE OF ENVELOPE FUNCTIONS AT HETEROINTERFACE [J].
AKERA, H ;
WAKAHARA, S ;
ANDO, T .
SURFACE SCIENCE, 1988, 196 (1-3) :694-699
[3]   PIEZORESISTANCE AND CONDUCTION-BAND MINIMA OF GAAS [J].
ASPNES, DE ;
CARDONA, M .
PHYSICAL REVIEW B, 1978, 17 (02) :741-751
[4]   ENERGY-BAND ALIGNMENT IN GAAS - (AL,GA)AS HETEROSTRUCTURES - THE DEPENDENCE ON ALLOY COMPOSITION [J].
BATEY, J ;
WRIGHT, SL .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) :200-209
[5]   RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].
CHANG, LL ;
ESAKI, L ;
TSU, R .
APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595
[6]   HIGH-STRESS PIEZORESISTANCE AND MOBILITY IN DEGENERATE SB-DOPED GERMANIUM [J].
CUEVAS, M ;
FRITZSCH.H .
PHYSICAL REVIEW, 1965, 137 (6A) :1847-&
[7]   TUNNELLING THROUGH GAAS-ALXGA1-XAS-GAAS DOUBLE HETEROJUNCTIONS [J].
DELAGEBEAUDEUF, D ;
DELESCLUSE, P ;
ETIENNE, P ;
MASSIES, J ;
LAVIRON, M ;
CHAPLART, J ;
LINH, T .
ELECTRONICS LETTERS, 1982, 18 (02) :85-87
[8]   TUNNELING HOT-ELECTRON TRANSFER AMPLIFIER - A HOT-ELECTRON GAAS DEVICE WITH CURRENT GAIN [J].
HEIBLUM, M ;
THOMAS, DC ;
KNOEDLER, CM ;
NATHAN, MI .
APPLIED PHYSICS LETTERS, 1985, 47 (10) :1105-1107
[9]  
Lu S., UNPUB
[10]   TUNNELING THROUGH INDIRECT-GAP SEMICONDUCTOR BARRIERS [J].
MENDEZ, EE ;
CALLEJA, E ;
WANG, WI .
PHYSICAL REVIEW B, 1986, 34 (08) :6026-6029