PRESSURE-DEPENDENCE OF SCHOTTKY-BARRIER HEIGHT AT THE PT/GAAS INTERFACE

被引：31

作者：

SHAN, W

LI, MF

YU, PY

HANSEN, WL

WALUKIEWICZ, W

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & CHEM SCI,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 11期

关键词：

D O I：

10.1063/1.100045

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：974 / 976

页数：3

共 28 条

[1] ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS
ALLEN, RE
DOW, JD
[J]. PHYSICAL REVIEW B, 1982, 25 (02): : 1423 - 1426
[2] INITIAL ADSORPTION STATE FOR AL ON GAAS(110) AND ITS ROLE IN THE SCHOTTKY-BARRIER FORMATION
DANIELS, RR
KATNANI, AD
ZHAO, TX
MARGARITONDO, G
ZUNGER, A
[J]. PHYSICAL REVIEW LETTERS, 1982, 49 (12) : 895 - 898
[3] RELATION BETWEEN THE COMMON ANION RULE AND THE DEFECT MODEL OF SCHOTTKY-BARRIER FORMATION
DAW, MS
SMITH, DL
[J]. SOLID STATE COMMUNICATIONS, 1981, 37 (03) : 205 - 208
[4] DOBACZEWSKI L, 1987, ACTA PHYS POL A, V71, P341
[5] TECHNIQUE FOR HIGH-PRESSURE ELECTRICAL-CONDUCTIVITY MEASUREMENT IN DIAMOND ANVIL CELLS AT CRYOGENIC TEMPERATURES
ERSKINE, D
YU, PY
MARTINEZ, G
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1987, 58 (03) : 406 - 411
[6] CORRELATION OF GAAS SURFACE-CHEMISTRY AND INTERFACE FERMI-LEVEL POSITION - A SINGLE DEFECT MODEL INTERPRETATION
GRANT, RW
WALDROP, JR
KOWALCZYK, SP
KRAUT, EA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 477 - 480
[7] HANFLAND M, 1984, J PHYSIQUE, V11, P57
[8] THEORY OF SURFACE STATES
HEINE, V
[J]. PHYSICAL REVIEW, 1965, 138 (6A): : 1689 - &
[9] INTERFACIAL CHEMICAL-REACTIVITY OF METAL CONTACTS WITH THIN NATIVE OXIDES OF GAAS
KOWALCZYK, SP
WALDROP, JR
GRANT, RW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 611 - 616
[10] NATIVE HOLE TRAP IN BULK GAAS AND ITS ASSOCIATION WITH THE DOUBLE-CHARGE STATE OF THE ARSENIC ANTISITE DEFECT
LAGOWSKI, J
LIN, DG
CHEN, TP
SKOWRONSKI, M
GATOS, HC
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 929 - 931

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