PRESSURE-DEPENDENCE OF SCHOTTKY-BARRIER HEIGHT AT THE PT/GAAS INTERFACE

被引:31
作者
SHAN, W
LI, MF
YU, PY
HANSEN, WL
WALUKIEWICZ, W
机构
[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & CHEM SCI,BERKELEY,CA 94720
[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720
关键词
D O I
10.1063/1.100045
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:974 / 976
页数:3
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共 28 条
  • [11] ELECTRONIC-STRUCTURE OF A METAL-SEMICONDUCTOR INTERFACE
    LOUIE, SG
    COHEN, ML
    [J]. PHYSICAL REVIEW B, 1976, 13 (06): : 2461 - 2469
  • [12] THE EFFECT OF SURFACE OXYGEN ON THE INTERMIXING AND SCHOTTKY-BARRIER AT GAAS(110)-AU INTERFACES
    LU, ZM
    PETRO, WG
    MAHOWALD, PH
    OSHIMA, M
    LINDAU, I
    SPICER, WE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 598 - 601
  • [13] SCHOTTKY-BARRIER FORMATION OF AG ON GAAS(110)
    LUDEKE, R
    CHIANG, TC
    MILLER, T
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 581 - 587
  • [14] ELECTRICAL STUDY OF SCHOTTKY BARRIERS ON ATOMICALLY CLEAN GAAS(110) SURFACES
    NEWMAN, N
    VANSCHILFGAARDE, M
    KENDELWICZ, T
    WILLIAMS, MD
    SPICER, WE
    [J]. PHYSICAL REVIEW B, 1986, 33 (02): : 1146 - 1159
  • [15] PRESSURE-DEPENDENCE OF DEEP LEVELS IN GAAS
    REN, SY
    DOW, JD
    WOLFORD, DJ
    [J]. PHYSICAL REVIEW B, 1982, 25 (12): : 7661 - 7665
  • [16] EXPERIMENTAL RESULTS EXAMINING VARIOUS MODELS OF SCHOTTKY-BARRIER FORMATION ON GAAS
    SPICER, WE
    NEWMAN, N
    KENDELEWICZ, T
    PETRO, WG
    WILLIAMS, MD
    MCCANTS, CE
    LINDAU, I
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1178 - 1183
  • [17] UNIFIED MECHANISM FOR SCHOTTKY-BARRIER FORMATION AND III-V-OXIDE INTERFACE STATES
    SPICER, WE
    LINDAU, I
    SKEATH, P
    SU, CY
    CHYE, P
    [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (06) : 420 - 423
  • [18] SYNCHROTRON RADIATION STUDIES OF ELECTRONIC-STRUCTURE AND SURFACE-CHEMISTRY OF GAAS, GASB, AND INP
    SPICER, WE
    LINDAU, I
    GREGORY, PE
    GARNER, CM
    PIANETTA, P
    CHYE, PW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 780 - 785
  • [19] UNIFIED DEFECT MODEL AND BEYOND
    SPICER, WE
    LINDAU, I
    SKEATH, P
    SU, CY
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1019 - 1027
  • [20] DEVELOPMENT AND CONFIRMATION OF THE UNIFIED MODEL FOR SCHOTTKY-BARRIER FORMATION AND MOS INTERFACE STATES ON III-V COMPOUNDS
    SPICER, WE
    EGLASH, S
    LINDAU, I
    SU, CY
    SKEATH, PR
    [J]. THIN SOLID FILMS, 1982, 89 (04) : 447 - 460