ELECTRICAL STUDY OF SCHOTTKY BARRIERS ON ATOMICALLY CLEAN GAAS(110) SURFACES

被引：147

作者：

NEWMAN, N

VANSCHILFGAARDE, M

KENDELWICZ, T

WILLIAMS, MD

SPICER, WE

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.33.1146

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1146 / 1159

页数：14

共 69 条

[1]

ADAMS AC, 1973, J ELECTROCHEM, V120, P414

[2] ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS [J].

ALLEN, RE ;

DOW, JD .

PHYSICAL REVIEW B, 1982, 25 (02) :1423-1426

[3] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[4] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[5] ELECTRONIC-STRUCTURE AND SCHOTTKY-BARRIER FORMATION OF AG ON N-TYPE GAAS(110) [J].

CHIN, KK ;

PAN, SH ;

MO, D ;

MAHOWALD, P ;

NEWMAN, N ;

LINDAU, I ;

SPICER, WE .

PHYSICAL REVIEW B, 1985, 32 (02) :918-923

[6] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION [J].

CHYE, PW ;

LINDAU, I ;

PIANETTA, P ;

GARNER, CM ;

SU, CY ;

SPICER, WE .

PHYSICAL REVIEW B, 1978, 18 (10) :5545-5559

[7] INITIAL ADSORPTION STATE FOR AL ON GAAS(110) AND ITS ROLE IN THE SCHOTTKY-BARRIER FORMATION [J].

DANIELS, RR ;

KATNANI, AD ;

ZHAO, TX ;

MARGARITONDO, G ;

ZUNGER, A .

PHYSICAL REVIEW LETTERS, 1982, 49 (12) :895-898

[8] ENERGY-LEVELS OF SEMICONDUCTOR SURFACE VACANCIES [J].

DAW, MS ;

SMITH, DL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1028-1031

[9] SURFACE-DEFECTS AND FERMI-LEVEL PINNING IN INP [J].

DOW, JD ;

ALLEN, RE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :659-661

[10] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J].

FREEOUF, JL ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :727-729

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