THE EFFECT OF SURFACE OXYGEN ON THE INTERMIXING AND SCHOTTKY-BARRIER AT GAAS(110)-AU INTERFACES

被引：10

作者：

LU, ZM ^{[1
]}

PETRO, WG ^{[1
]}

MAHOWALD, PH ^{[1
]}

OSHIMA, M ^{[1
]}

LINDAU, I ^{[1
]}

SPICER, WE ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582605

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：598 / 601

页数：4

共 12 条

[1] PHOTOEMISSION-STUDIES OF THE AU-INP(110) INTERFACE
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 762 - 765
[2] OXIDATION OF ORDERED AND DISORDERED GAAS(110)
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SU, CY
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1191 - 1194
[3] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION
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SPICER, WE
[J]. PHYSICAL REVIEW B, 1978, 18 (10): : 5545 - 5559
[4] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[5] PHOTOEMISSION SPECTRA FOR GOLD FOR 15 LESS THAN OR EQUAL TO HV LESS THAN OR EQUAL TO 90EV AND X-RAY LIMIT
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ERBUDAK, M
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[J]. SOLID STATE COMMUNICATIONS, 1973, 13 (07) : 771 - 773
[6] PHOTOEMISSION STUDY OF ADSORPTION OF O2, CO AND H2 ON GAAS(110)
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[J]. SURFACE SCIENCE, 1976, 54 (02) : 229 - 258
[7] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS
HIRAKI, A
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KAMMURA, W
IWAMI, M
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 611 - 612
[8] INTERFACIAL CHEMICAL-REACTIVITY OF METAL CONTACTS WITH THIN NATIVE OXIDES OF GAAS
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WALDROP, JR
GRANT, RW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 611 - 616
[9] PETRO WG, 1983, J VAC SCI TECHNOL A, V1, P762
[10] CHEMISORPTION AND OXIDATION STUDIES OF (110) SURFACES OF GAAS, GASB, AND INP
PIANETTA, P
LINDAU, I
GARNER, CM
SPICER, WE
[J]. PHYSICAL REVIEW B, 1978, 18 (06): : 2792 - 2806

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