PHOTOEMISSION STUDY OF ADSORPTION OF O2, CO AND H2 ON GAAS(110)

被引:48
作者
GREGORY, PE [1 ]
SPICER, WE [1 ]
机构
[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
关键词
D O I
10.1016/0039-6028(76)90223-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:229 / 258
页数:30
相关论文
共 36 条
[1]  
ARTHUR JR, 1967, J APPL PHYS, V18, P4023
[2]  
CIRACI S, 1974, B AM PHYS SOC, V19, P214
[3]   ADSORPTION OF OXYGEN ON CLEAN CLEAVED (110) GALLIUM-ARSENIDE SURFACES [J].
DORN, R ;
LUTH, H ;
RUSSELL, GJ .
PHYSICAL REVIEW B, 1974, 10 (12) :5049-5056
[4]   PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110) [J].
EASTMAN, DE ;
FREEOUF, JL .
PHYSICAL REVIEW LETTERS, 1974, 33 (27) :1601-1605
[5]   HIGH INTENSITY HOT FILAMENT VACUUM ULTRAVIOLET LIGHT SOURCE [J].
EASTMAN, DE ;
DONELON, JJ .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1970, 41 (11) :1648-&
[6]   PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J].
EASTMAN, DE ;
GROBMAN, WD .
PHYSICAL REVIEW LETTERS, 1972, 28 (21) :1378-&
[7]  
Eden R. C., 1970, Review of Scientific Instruments, V41, P252, DOI 10.1063/1.1684483
[8]  
EDEN RC, 1967, THESIS STANFORD U
[9]   STANDARD FOR ULTRAVIOLET-RADIATION [J].
FISHER, GB ;
SPICER, WE ;
MCKERNAN, PC ;
PERESKOK, VF ;
WANNER, SJ .
APPLIED OPTICS, 1973, 12 (04) :799-804
[10]  
Freeouf J. L., 1975, Critical Reviews in Solid State Sciences, V5, P245, DOI 10.1080/10408437508243482