PHOTOEMISSION-STUDIES OF THE AU-INP(110) INTERFACE

被引：29

作者：

BABALOLA, IA ^{[1
]}

PETRO, WG ^{[1
]}

KENDELEWICZ, T ^{[1
]}

LINDAU, I ^{[1
]}

SPICER, WE ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.571995

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：762 / 765

页数：4

共 17 条

[1] BABALOLA IA, UNPUB
[2] BECHSTEDT F, 1981, PHYS STATUS SOLIDI B, V107, P63
[3] ATOMIC MODULATION OF INTER-DIFFUSION AT AU-GAAS INTERFACES
BRILLSON, LJ
MARGARITONDO, G
STOFFEL, NG
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (10) : 667 - 670
[4] SSRL ULTRAHIGH-VACUUM GRAZING INCIDENCE MONOCHROMATOR - DESIGN CONSIDERATIONS AND OPERATING EXPERIENCE
BROWN, FC
BACHRACH, RZ
LIEN, N
[J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 152 (01): : 73 - 79
[5] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION
CHYE, PW
LINDAU, I
PIANETTA, P
GARNER, CM
SU, CY
SPICER, WE
[J]. PHYSICAL REVIEW B, 1978, 18 (10): : 5545 - 5559
[6] EVIDENCE FOR A NEW TYPE OF METAL-SEMICONDUCTOR INTERACTION ON GASB
CHYE, PW
LINDAU, I
PIANETTA, P
GARNER, CM
SPICER, WE
[J]. PHYSICAL REVIEW B, 1978, 17 (06): : 2682 - 2684
[7] SURFACE VACANCIES IN II-VI AND III-V ZINC BLENDE SEMICONDUCTORS
DAW, MS
SMITH, DL
SWARTS, CA
MCGILL, TC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 508 - 512
[8] SURFACE-DEFECTS AND FERMI-LEVEL PINNING IN INP
DOW, JD
ALLEN, RE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 659 - 661
[9] HANSEN M, 1958, CONSTITUTION BINARY, P210
[10] NEW PHENOMENA IN SCHOTTKY-BARRIER FORMATION ON III-V-COMPOUNDS
LINDAU, I
CHYE, PW
GARNER, CM
PIANETTA, P
SU, CY
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1332 - 1339