Notch profile defect in aluminum alloy etching using high-density plasma

被引:14
作者
Tabara, S
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 4B期
关键词
plasma etching; aluminum alloy; inductively coupled plasma; ECR plasma; charge build up; notch; ion current density; BN; selectivity; TiN;
D O I
10.1143/JJAP.35.2456
中图分类号
O59 [应用物理学];
学科分类号
摘要
An etching profile distortion called a ''notch'' was observed in Al alloy etching using inductively coupled plasma and electron cyclotron resonance plasma etcher. Mechanisms of notch formation and reduction were discussed. Electron charge up and the lowered electrical potential of the specific patterns are the reasons for the notch occurrence. Notches are smaller at the Al/Ti(O)N-stacked structure. A new etching method is proposed for eliminating notches and achieving high selectivity employing an ICP etcher.
引用
收藏
页码:2456 / 2462
页数:7
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