Hot-wire chemical vapor deposition (HWCVD) of fluorocarbon and organosilicon thin films

被引：52

作者：

Lau, KKS ^{[1
]}

Lewis, HGP ^{[1
]}

Limb, SJ ^{[1
]}

Kwan, MC ^{[1
]}

Gleason, KK ^{[1
]}

机构：

[1] MIT, Dept Chem Engn, Cambridge, MA 02139 USA

来源：

THIN SOLID FILMS | 2001年 / 395卷 / 1-2期

关键词：

hot-wire deposition; fluorocarbon; organosilicon;

D O I：

10.1016/S0040-6090(01)01287-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

HWCVD affords the capability to synthesize fluorocarbon and organosilicon thin films. These two classes of materials are of interest for a wide range of applications, including low dielectric constant coatings for microelectronic interconnection, 'dry' photoresists. directly patternable dielectrics for lithographic production of integrated circuits, insulating biomaterials for implantable devices with complex topologies and small dimensions, low friction coatings, and semipermeable membranes. HWCVD from hexafluoropropylene oxide (C3F6O) dramatically reduces cross-link and defect concentrations in fluorocarbon coatings, producing films which are spectroscopically indistinguishable from bulk polytetrafluoroethylene (PTFE, Teflon (TM)). Organosilicon films can be deposited from cyclic precursors such as octamethylcyclotetrasiloxane (D-4) at extremely high rates (>2 mum/min) by HWCVD. The bonding structure of HWCVD organosilicon films is substantially different from both their plasma enhanced CVD (PECVD) counterparts and bulk siloxane polymers, such as poly (dimethysiloxane) (PDMS). (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：288 / 291

页数：4

共 16 条

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