New Silicon Architectures by Gold-Assisted Chemical Etching

被引：85

作者：

Bechelany, Mikhael ^{[1
,2
]}

Berodier, Elise ^{[1
]}

Maeder, Xavier ^{[1
]}

Schmitt, Sebastian ^{[1
]}

Michler, Johann ^{[1
]}

Philippe, Laetitia ^{[1
]}

机构：

[1] Swiss Fed Labs Mat Sci & Technol, EMPA, CH-3602 Thun, Switzerland

[2] Univ Montpellier 2, Inst Europeen Membranes ENSCM UMR CNRS 5635, F-34095 Montpellier, France

来源：

ACS APPLIED MATERIALS & INTERFACES | 2011年 / 3卷 / 10期

关键词：

silicon nanowires; nanosphere lithography; metal-assisted chemical etching; gold; etching mechanism; EDX mapping; NANOWIRE ARRAYS; SI NANOWIRES; SOLAR-CELLS; METAL; FABRICATION; GROWTH; NANOPARTICLES; LITHOGRAPHY; MORPHOLOGY; DIAMETER;

D O I：

10.1021/am200948p

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Silicon nanowires (SiNWs) were produced by nanosphere lithography and metal assisted chemical etching. The combination of these methods allows the morphology and organization control of Si NWs on a large area. From the investigation of major parameters affecting the etching such as doping type, doping concentration of the substrate, we demonstrate the formation of new Si architectures consisting of organized Si NW arrays formed on a micro/mesoporous silicon, layer with different thickness. These investigations will allow us to better understand the mechanism of Si etching to enable a wide range of applications such as molecular sensing, and for thermoelectric and photovoltaic devices.

引用

收藏

页码：3866 / 3873

页数：8

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