Adsorption structure of Ba on an Si(001)-(2x1) surface

被引：31

作者：

Urano, T ^{[1
]}

Tamiya, K ^{[1
]}

Ojima, K ^{[1
]}

Hongo, S ^{[1
]}

Kanaji, T ^{[1
]}

机构：

[1] HIROSIMA DENKI INST TECHNOL, NAKANO KU, HIROSHIMA 73903, JAPAN

来源：

SURFACE SCIENCE | 1996年 / 357卷 / 1-3期

关键词：

auger electron spectroscopy; barium; low energy electron diffraction (LEED); metal-semiconductor interfaces; silicides;

D O I：

10.1016/0039-6028(96)00201-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The behaviour of Ba atoms on a Si(001) surface was investigated by means of Auger electron spectroscopy (AES), low-energy electron diffraction (LEED), metastable-atom de-excitation spectroscopy (MDS) and thermal desorption spectroscopy (TDS). A 2D phase diagram of surface structures as a function of substrate temperature and Ba coverage was obtained. The existence of a saturation coverage of less than 1 ML with a corresponding LEED pattern, of(2 x 3), (2 x I) and (2 x 4) dependent on a temperature higher than 800 degrees C, was confirmed.

引用

页码：459 / 463

页数：5

共 6 条

[1]

COGHLAN WA, 1971, CATALOG CALCULATED A, P192

[2] IDENTIFICATION OF ORDERED ATOMIC STRUCTURES OF BA ON THE SI(100) SURFACE [J].

FAN, WC ;

IGNATIEV, A .

SURFACE SCIENCE, 1991, 253 (1-3) :297-302

[3] OBSERVATION OF THE INTERFACE OF BA/SI(100) BY MDS AND TDS [J].

HONGO, S ;

OJIMA, K ;

TANIGUCHI, S ;

URANO, T ;

KANAJI, T .

APPLIED SURFACE SCIENCE, 1994, 82-3 (1-4) :537-542

[4] BA DEPOSITION ON SI(100)2X1 [J].

VLACHOS, D ;

KAMARATOS, M ;

PAPAGEORGOPOULOS, C .

SOLID STATE COMMUNICATIONS, 1994, 90 (03) :175-181

[5] THE BA/SI(100)-2X1 INTERFACE .2. XPS, BIS AND SYNCHROTRON PS STUDIES OF SCHOTTKY-BARRIER FORMATION [J].

WEIJS, PJW ;

VANACKER, JF ;

FUGGLE, JC ;

VANDERHEIDE, PAM ;

HAAK, H ;

HORN, K .

SURFACE SCIENCE, 1992, 260 (1-3) :102-112

[6] THE BA/SI(100)-2X1 INTERFACE .1. XPS AND XAES STUDIES OF SILICIDE FORMATION [J].

WEIJS, PJW ;

FUGGLE, JC ;

VANDERHEIDE, PAM .

SURFACE SCIENCE, 1992, 260 (1-3) :97-101

← 1 →