THE BA/SI(100)-2X1 INTERFACE .1. XPS AND XAES STUDIES OF SILICIDE FORMATION

被引：16

作者：

WEIJS, PJW ^{[1
]}

FUGGLE, JC ^{[1
]}

VANDERHEIDE, PAM ^{[1
]}

机构：

[1] CATHOLIC UNIV NIJMEGEN,FAC WISKUNDE NAT WETENSCHAPPEN,MAT RES INST,6525 ED NIJMEGEN,NETHERLANDS

来源：

SURFACE SCIENCE | 1992年 / 260卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)90022-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In two complementary papers we present the results and analysis of an extended study of the Ba/Si(100)-2 x 1 interface. In this paper, we will discuss X-ray excited Auger electron spectroscopy- and X-ray photoelectron spectroscopy chemical shifts, as well as plasmon losses, which have been studied to answer the question whether silicide formation occurs at this interface. It is found that no silicide formation takes place at room temperature. Two Ba-Si phases are detected as reaction products upon annealing the Ba/Si(100) system at approximately 550 K.

引用

页码：97 / 101

页数：5

共 35 条

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