Recombination dynamics in wurtzite InP nanowires

被引：15

作者：

Crankshaw, S. ^{[1
]}

Reitzenstein, S. ^{[3
]}

Chuang, L. C. ^{[2
]}

Moewe, M. ^{[2
]}

Muench, S. ^{[3
]}

Boeckler, C. ^{[3
]}

Forchel, A. ^{[3
]}

Chang-Hasnain, C. ^{[1
,2
]}

机构：

[1] Univ Calif Berkeley, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[3] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.77.235409

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report time-resolved photoluminescence investigations of as-grown wurtzite InP nanowires (d(av)=16 nm) on a (111) silicon substrate as a function of emission energy, temperature, and excitation fluence. The observed luminescence transients are well described by a biexponential decay process, with tau(fast)similar to 0.3-0.7 ns and tau(slow)similar to 2-5 ns, which does not originate from band bending induced by surface states. The trends associated with the decay characteristics instead point to size-dependent localization effects in the narrow nanowires.

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页数：6

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