Interpretation of Stochastic Events in Single-Molecule Measurements of Conductance and Transition Voltage Spectroscopy

被引:48
作者
Baldea, Ioan [1 ,2 ]
机构
[1] Univ Heidelberg, D-69120 Heidelberg, Germany
[2] ISS, NILPRP, RO-077125 Bucharest, Romania
关键词
CHARGE-TRANSPORT; JUNCTIONS; THERMOELECTRICITY; RESISTANCE; CONTACTS; METALS; WIRES; LONG;
D O I
10.1021/ja302248h
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The first simultaneous measurements of transition voltage (V-t) spectroscopy (TVS) and conductance (G) histograms (Guo et al., J. Am. Chem. Soc. 2011, 133, 19189) form a great case for studying stochastic effects, which are ubiquitous in molecular junctions. Here an interpretation of those data is proposed that emphasizes the different physical content of V-t and G and reveals that fluctuations in the molecular orbital alignment have a significantly larger impact on G than initially claimed. The present study demonstrates the usefulness of corroborating statistical information on different transport properties and gives support to TVS as a valuable investigative tool.
引用
收藏
页码:7958 / 7962
页数:5
相关论文
共 37 条
[1]   Theoretical calculations of electron transport in molecular junctions: Inflection behavior in Fowler-Nordheim plot and its origin [J].
Araidai, Masaaki ;
Tsukada, Masaru .
PHYSICAL REVIEW B, 2010, 81 (23)
[2]   Probing the chemistry of molecular heterojunctions using thermoelectricity [J].
Baheti, Kanhayalal ;
Malen, Jonathan A. ;
Doak, Peter ;
Reddy, Pramod ;
Jang, Sung-Yeon ;
Tilley, T. Don ;
Majumdar, Arun ;
Segalman, Rachel A. .
NANO LETTERS, 2008, 8 (02) :715-719
[3]  
Baldea I., 2012, EPL, V98
[4]  
Baldea I., 2012, CHEM PHYS, DOI [10.1016/j.chem-phys.2012.02.011, DOI 10.1016/J.CHEM-PHYS.2012.02.011]
[5]   Ambipolar transition voltage spectroscopy: Analytical results and experimental agreement [J].
Baldea, Ioan .
PHYSICAL REVIEW B, 2012, 85 (03)
[6]   Revealing molecular orbital gating by transition voltage spectroscopy [J].
Baldea, Ioan .
CHEMICAL PHYSICS, 2010, 377 (1-3) :15-20
[7]   Sources of negative differential resistance in electric nanotransport [J].
Baldea, Ioan ;
Koeppel, Horst .
PHYSICAL REVIEW B, 2010, 81 (19)
[8]   Influence of band structure on the apparent barrier height in scanning tunneling microscopy [J].
Becker, Michael ;
Berndt, Richard .
PHYSICAL REVIEW B, 2010, 81 (03)
[9]   Transition from direct tunneling to field emission in metal-molecule-metal junctions [J].
Beebe, Jeremy M. ;
Kim, BongSoo ;
Gadzuk, J. W. ;
Frisbie, C. Daniel ;
Kushmerick, James G. .
PHYSICAL REVIEW LETTERS, 2006, 97 (02)
[10]   Quantifying transition voltage spectroscopy of molecular junctions: Ab initio calculations [J].
Chen, Jingzhe ;
Markussen, Troels ;
Thygesen, Kristian S. .
PHYSICAL REVIEW B, 2010, 82 (12)