Transition from direct tunneling to field emission in metal-molecule-metal junctions

被引：533

作者：

Beebe, Jeremy M. ^{[1
]}

Kim, BongSoo

Gadzuk, J. W.

Frisbie, C. Daniel

Kushmerick, James G.

机构：

[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[2] Univ Minnesota, Dept Chem, Minneapolis, MN 55455 USA

[3] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 97卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.97.026801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Current-voltage measurements of metal-molecule-metal junctions formed from pi-conjugated thiols exhibit an inflection point on a plot of ln(I/V-2) vs 1/V, consistent with a change in transport mechanism from direct tunneling to field emission. The transition voltage was found to scale linearly with the offset in energy between the Au Fermi level and the highest occupied molecular orbital as determined by ultraviolet photoelectron spectroscopy. Asymmetric voltage drops at the two metal-molecule interfaces cause the transition voltage to be dependent on bias polarity.

引用

页数：4

共 19 条

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