Improvement in oxidation resistance of carbon by formation of a protective SiO2 layer on the surface

被引:26
作者
Koh, YH
Kwon, OS
Hong, SH
Kim, HE [1 ]
Lee, SK
机构
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
[2] Res Inst Ind Sci & Technol, Pohang 790330, South Korea
关键词
carbon; coating; oxidation resistance;
D O I
10.1016/S0955-2219(01)00213-8
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Solid carbon was coated with silicon dioxide (SiO2) to improve the oxidation resistance at elevated temperatures. SiO2 was deposited on the surface of carbon via gas phase transport. Coating was carried out by exposing the carbon next to a bed of SiC powder in a flowing H-2-H2O gas at 1400 degreesC for 1 h. The formation of SiO2 layer was strongly dependent on the water vapor pressure (P-H2O) in the gas stream. When the P-H2O was around 1.3 x 10(-2) atm, a dense and uniform SiO2 layer was formed on the carbon surface. The layer was crystalline (cristobalite) and slightly cracked apparently due to the thermal expansion mismatch. The oxidation resistance of the carbon was improved markedly by the coating layer. When oxidized in air under the same conditions, the weight loss of the coated specimen was reduced by more than a factor of 5 compared to the uncoated specimen. This improvement in oxidation resistance was attributed to the retardation of oxygen transport through the coating layer. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:2407 / 2412
页数:6
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