Direct comparison of field-effect and electrochemical doping in regioregular poly(3-hexylthiophene)

被引:123
作者
Shimotani, H [1 ]
Diguet, G
Iwasa, Y
机构
[1] Tohoku Univ, Inst Mat Sci, Sendai, Miyagi 9808577, Japan
[2] Japan Sci & Technol Agcy, Core Res Evolut Sci & Technol, Kawaguchi 3300012, Japan
[3] Univ Rennes 1, Unite Format & Rech Struct & Proprietes Mat, F-35042 Rennes, France
关键词
D O I
10.1063/1.1850614
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have measured carrier mobility of regioregular poly(3-hexylthiophene) films by both field-effect and electrochemical doping on identical devices, which allowed us a direct comparison between the two doping processes. The carrier mobility of electrochemical doping at low doping levels was lower than that of field-effect doping by two orders of magnitudes, while that of electrochemical doping steeply increased with doping levels, reaching comparable or higher values than that of field-effect doping. These results are attributable to carrier trapping by the Coulomb potentials of dopant anions at low doping levels, demonstrating a significant difference between field-effect and chemical doping. (C) 2005 American Institute of Physics.
引用
收藏
页码:022104 / 1
页数:3
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