Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFET's

被引：130

作者：

Ren, F ^{[1
]}

Kuo, JM ^{[1
]}

Hong, M ^{[1
]}

Hobson, WS ^{[1
]}

Lothian, JR ^{[1
]}

Lin, J ^{[1
]}

Tsai, HS ^{[1
]}

Mannaerts, JP ^{[1
]}

Kwo, J ^{[1
]}

Chu, SNG ^{[1
]}

Chen, YK ^{[1
]}

Cho, AY ^{[1
]}

机构：

[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1998年 / 19卷 / 08期

关键词：

D O I：

10.1109/55.704409

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have demonstrated the first Ga2O3(Gd2O3) insulated gate n-channel enhancement-mode In0.53Ga0.47As MOSFET's on InP semi-insulating substrate. Ga2O3(Gd2O3) was electron beam deposited from a high purity single crystal Ga5Gd3O12 source. The source and drain regions of the device were selectively implanted,vith Si to produce low resistance ohmic contacts. A 0.75-mu m gate length device exhibits an extrinsic transconductance of 190 mS/mm, which is an order of magnitude improvement over previously reported enhancement-mode InGaAs MISFET's. The current gain cutoff frequency, f(t), and the maximum frequency of oscillation, f(max) of 7 and 10 GHz were obtained, respectively, for a 0.75 x 100 mu m(2) gate dimension device at a gate voltage of 3 V and drain voltage of 2 V.

引用

页码：309 / 311

页数：3