Influence of oxides on friction during CuCMP

被引：33

作者：

Liang, H

Martin, JM

Lee, R

机构：

[1] Univ Alaska Fairbanks, Dept Mech Engn, Fairbanks, AK 99775 USA

[2] Ecole Cent Lyon, F-69130 Ecully, France

[3] Argonne Natl Lab, Argonne, IL 60439 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2001年 / 30卷 / 04期

关键词：

CuCMP; electrochemistry of Cu; tribology; nano-abrasive particles; Cu passivation; Cu oxidation;

D O I：

10.1007/s11664-001-0049-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we investigated the frictional behavior of copper CMP. Using a laboratory polishing set up, we polished Cu with designed polishing media. After that the copper surface and the fumed silica particles Cu were analyzed. The surface analysis techniques used are the field emission SEM, the field-emission high-resolution analytical TEM, x-ray spectroscopy, and XPS. We found evident difference in friction value using different polishing media. Discussions lead to three mechanisms during copper CMP. The nature of copper oxides has a profound influence on friction and might be directly related to defects.

引用

页码：391 / 395

页数：5

共 17 条

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