Defects and nanocrystals generated by Si implantation into a-SiO2

被引：35

作者：

Nicklaw, CJ

Pagey, MP

Pantelides, ST

Fleetwood, DM

Schrimpf, RD

Galloway, KF

Wittig, JE

Howard, BM

Taw, E

McNeil, WH

Conley, JF

机构：

[1] Vanderbilt Univ, Nashville, TN 37235 USA

[2] Dynam Res Corp, San Diego, CA 92106 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2000年 / 47卷 / 06期

关键词：

D O I：

10.1109/23.903764

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical charge-trapping characteristics have been studied in thermal oxides that were implanted,vith Si, experimentally using electron spin resonance (ESR), capacitance versus voltage (CV) measurements, transmission electron microscopy (TEM), atomic force microscopy (AFM), and theoretically with Density Functional Theory (DFT) using plane waves. Our study examines possible defect structures associated with excess Si in thermal oxides.

引用

页码：2269 / 2275

页数：7

共 22 条

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