EVIDENCE FOR A DEEP ELECTRON TRAP AND CHARGE COMPENSATION IN SEPARATION BY IMPLANTED OXYGEN OXIDES

被引：25

作者：

CONLEY, JF ^{[1
]}

LENAHAN, PM ^{[1
]}

ROITMAN, P ^{[1
]}

机构：

[1] NATL INST STAND & TECHNOL,GAITHERSBURG,MD

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1992年 / 39卷 / 06期

关键词：

D O I：

10.1109/23.211410

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present direct evidence for the creation of deep electron traps in Separation by IMplantation of OXygen buried oxides. In addition, we present combined electrical and electron spin resonance evidence which demonstrate that at least some positively charged paramagnetic E' centers are compensated by negatively charged centers. Finally, we present evidence which strongly suggests that a substantial fraction the deep electron traps are coupled to E' centers.

引用

页码：2114 / 2120

页数：7

共 28 条

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