ELECTRON-SPIN-RESONANCE OF SEPARATION BY IMPLANTED OXYGEN OXIDES - EVIDENCE FOR STRUCTURAL-CHANGE AND A DEEP ELECTRON TRAP

被引：36

作者：

CONLEY, JF ^{[1
]}

LENAHAN, PM ^{[1
]}

ROITMAN, P ^{[1
]}

机构：

[1] NATL INST STAND & TECHNOL,GAITHERSBURG,MD

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 23期

关键词：

D O I：

10.1063/1.106809

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present direct evidence for deep electron traps and structural changes in separation by implanted oxygen (SIMOX) buried oxides and evidence that some positively charged E' centers are compensated by negatively charged centers in SIMOX oxides.

引用

页码：2889 / 2891

页数：3

共 13 条

[1] ABRIGAM A, 1970, ELECTRON PARAMAGNETI
[2] TIME-DEPENDENT HOLE AND ELECTRON TRAPPING EFFECTS IN SIMOX BURIED OXIDES
BOESCH, HE
TAYLOR, TL
HITE, LR
BAILEY, WE
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1990, 37 (06) : 1982 - 1989
[3] Conley J. F., 1991, 1991 IEEE International SOI Conference Proceedings (Cat. No.91CH3053-6), P12, DOI 10.1109/SOI.1991.162832
[4] ELECTRON-SPIN-RESONANCE STUDY OF E-TRAPPING CENTERS IN SIMOX BURIED OXIDES
CONLEY, JF
LENAHAN, PM
ROITMAN, P
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1991, 38 (06) : 1247 - 1252
[5] CONLEY JF, 1991, B AM PHYS SOC, V36, P620
[6] CONLEY JF, 1990, 1990 P IEEE SOS SOI, pR164
[7] CONLEY JF, 1991, 1991 P INS FILMS SEM, P259
[8] HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES
LENAHAN, PM
DRESSENDORFER, PV
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3495 - 3499
[9] ELECTRON TRAPPING IN IRRADIATED SIMOX BURIED OXIDES
OUISSE, T
CRISTOLOVEANU, S
BOREL, G
[J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (06) : 312 - 314
[10] VACUUM ULTRAVIOLET RADIATION EFFECTS IN SIO2
POWELL, RJ
DERBENWICK, GF
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 99 - +

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