ELECTRON TRAPPING IN IRRADIATED SIMOX BURIED OXIDES

被引：38

作者：

OUISSE, T ^{[1
]}

CRISTOLOVEANU, S ^{[1
]}

BOREL, G ^{[1
]}

机构：

[1] INST NATL POLYTECH GRENOBLE,ECOLE NATL SUPER ELECTR & RADIOELECT GRENOBLE,CNRS,F-38016 GRENOBLE,FRANCE

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 06期

关键词：

D O I：

10.1109/55.82071

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The presence of numerous electron traps in the buried oxide may dominate the back-gate threshold voltage shift of strongly irradiated SIMOX transistors. A rebound effect occurs under a negative oxide field, due to the trapping of negative charges rather than to interface states generation. Irradiated transistors also show an increased sensitivity to hot-carrier effects.

引用

页码：312 / 314

页数：3

共 4 条

[1] PARAMETER EXTRACTION METHOD FOR INHOMOGENEOUS MOSFETS LOCALLY DAMAGED BY HOT CARRIER INJECTION [J].