PARAMETER EXTRACTION METHOD FOR INHOMOGENEOUS MOSFETS LOCALLY DAMAGED BY HOT CARRIER INJECTION

被引：14

作者：

HADDARA, HS

CRISTOLOVEANU, S

机构：

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 11期

关键词：

D O I：

10.1016/0038-1101(88)90003-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1573 / 1581

页数：9

相关论文

共 11 条

[1] STUDY AND MODELING OF THE DEGRADATION OF SUBMICRON MOSFETS UNDER ELECTRICAL STRESS
CABONTILL, B
GHIBAUDO, G
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1986, 21 (05): : 305 - 318
[2] CHUHAO B, 1985, SOLID STATE ELECTRON, V28, P1025
[3] FANG Z, 1985, ESSDERC 85 AACHEN
[4] TWO-DIMENSIONAL MODELING OF LOCALLY DAMAGED SHORT-CHANNEL MOSFETS OPERATING IN THE LINEAR REGION
HADDARA, H
CRISTOLOVEANU, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 378 - 385
[5] PROFILING OF STRESS-INDUCED INTERFACE STATES IN SHORT CHANNEL MOSFETS USING A COMPOSITE CHARGE PUMPING TECHNIQUE
HADDARA, H
CRISTOLOVEANU, S
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (08) : 767 - 772
[6] RELATIONSHIP BETWEEN MOSFET DEGRADATION AND HOT-ELECTRON-INDUCED INTERFACE-STATE GENERATION
HSU, FC
TAM, S
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) : 50 - 52
[7] DETERMINATION OF SPATIAL SURFACE-STATE DENSITY DISTRIBUTION IN MOS AND SIMOS TRANSISTORS AFTER CHANNEL HOT-ELECTRON INJECTION
MAES, HE
GROESENEKEN, G
[J]. ELECTRONICS LETTERS, 1982, 18 (09) : 372 - 374
[8] NGUYENDUC C, IN PRESS IEEE ELECTR
[9] REIMBOLD G, 1988, ESSDERC 88 MONTPELLI
[10] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES
SUN, SC
PLUMMER, JD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1497 - 1508