DETERMINATION OF SPATIAL SURFACE-STATE DENSITY DISTRIBUTION IN MOS AND SIMOS TRANSISTORS AFTER CHANNEL HOT-ELECTRON INJECTION

被引：30

作者：

MAES, HE

GROESENEKEN, G

机构：

来源：

关键词：

D O I：

10.1049/el:19820255

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：372 / 374

页数：3

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[5]

Frohman-Bentchkowsky D., 1981, International Electron Devices Meeting, P14

[6]

MATSUMOTO H, 1981, IEEE T ELECTRON DEV, V28, P923, DOI 10.1109/T-ED.1981.20460

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