DETERMINATION OF SPATIAL SURFACE-STATE DENSITY DISTRIBUTION IN MOS AND SIMOS TRANSISTORS AFTER CHANNEL HOT-ELECTRON INJECTION

被引:30
作者
MAES, HE
GROESENEKEN, G
机构
关键词
D O I
10.1049/el:19820255
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:372 / 374
页数:3
相关论文
共 8 条
[1]   CHARGE PUMPING IN MOS DEVICES [J].
BRUGLER, JS ;
JESPERS, PGA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (03) :297-+
[2]   HOT-ELECTRON EMISSION IN N-CHANNEL IGFETS [J].
COTTRELL, PE ;
TROUTMAN, RR ;
NING, TH .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :442-455
[3]   HOT-ELECTRON INJECTION INTO THE OXIDE IN N-CHANNEL MOS DEVICES [J].
EITAN, B ;
FROHMANBENTCHKOWSKY, D .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (03) :328-340
[4]   USE OF CHARGE PUMPING CURRENTS TO MEASURE SURFACE STATE DENSITIES IN MOS-TRANSISTORS [J].
ELLIOT, ABM .
SOLID-STATE ELECTRONICS, 1976, 19 (03) :241-247
[5]  
Frohman-Bentchkowsky D., 1981, International Electron Devices Meeting, P14
[6]  
MATSUMOTO H, 1981, IEEE T ELECTRON DEV, V28, P923, DOI 10.1109/T-ED.1981.20460
[7]   HOT-ELECTRON EMISSION FROM SILICON INTO SILICON DIOXIDE [J].
NING, TH .
SOLID-STATE ELECTRONICS, 1978, 21 (01) :273-282
[8]   ONE-DIMENSIONAL WRITING MODEL OF N-CHANNEL FLOATING GATE IONIZATION-INJECTION MOS (FIMOS) [J].
TANAKA, S ;
ISHIKAWA, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) :1190-1197