PROFILING OF STRESS-INDUCED INTERFACE STATES IN SHORT CHANNEL MOSFETS USING A COMPOSITE CHARGE PUMPING TECHNIQUE

被引：25

作者：

HADDARA, H

CRISTOLOVEANU, S

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 08期

关键词：

D O I：

10.1016/0038-1101(86)90177-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：767 / 772

页数：6

相关论文

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