AGING OF SUB-MICRON MOS-TRANSISTORS AFTER ELECTRICAL STRESS

被引：8

作者：

CRISTOLOVEANU, S ^{[1
]}

CABONTILL, B ^{[1
]}

KANG, KN ^{[1
]}

GENTIL, P ^{[1
]}

GAUTIER, J ^{[1
]}

机构：

[1] CEA,IRDI,CEN GRENOBLE,LETI,ELECTR & TECHNOL INFORMAT LAB,F-38041 GRENOBLE,FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1984年 / 19卷 / 11期

关键词：

D O I：

10.1051/rphysap:019840019011093300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：933 / 939

页数：7

相关论文

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