Conduction in porous silicon contacted by a liquid phase

被引：12

作者：

Gelloz, B

Bsiesy, A

Gaspard, F

Muller, F

机构：

[1] Lab. Spectrometrie Phys. Associe C., Univ. Joseph Fourier de Grenoble, 38402-Saint Martin d'Heres Cedex

来源：

THIN SOLID FILMS | 1996年 / 276卷 / 1-2期

关键词：

diffusion; silicon; solid electrolyte interface;

D O I：

10.1016/0040-6090(95)08085-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The origin of the electronic free charge carrier accumulation/depletion in the porous silicon skeleton contacted with an electrolyte is determined by investigating the limiting step in the conduction process. Experimental evidence, supported by quantitative considerations, show that the porous silicon can be conductive if the free charge carrier Aux supplied by the substrate is not the rate-determining step of the electrical current conduction.

引用

收藏

页码：175 / 178

页数：4

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