A sensitive and fast radio frequency single-electron transistor

We have fabricated an aluminium single-electron transistor (SET) and characterized it at frequencies up to 8 MHz by measuring the reflected signal from a 331 MHz resonant tank in which the transistor is embedded. Within a bandwidth of 8 MHz, we measured the charge sensitivity of this radio-frequency SET, i.e. rf-SET, to 6.3 x 10(-6) e/root Hz, which corresponds to the uncoupled energy sensitivity of 13h.