PROCEEDINGS OF THE 1998 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING
|
1998年
关键词:
D O I:
10.1109/BIPOL.1998.741892
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
At high frequencies, substrate effects significantly degrade gain and noise figure of LNA's. A new bond-pad structure presented here significantly reduces substrate effects in a 4.4-GHz LNA resulting in a 10-dB increase in gain and a better than 2-dB improvement in noise figure. The inter-pad isolation of the new bond-pad structure is as much as 30-dB better than that of the conventional bond-pads.