A bond-pad structure for reducing effects of substrate resistance on LNA performance in a silicon bipolar technology

被引:11
作者
Colvin, JT [1 ]
Bhatia, SS [1 ]
O, KK [1 ]
机构
[1] Univ Florida, Dept Elect & Comp Engn, Silicon Microwave Integrated Circuits & Syst Res, Gainesville, FL 32611 USA
来源
PROCEEDINGS OF THE 1998 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 1998年
关键词
D O I
10.1109/BIPOL.1998.741892
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
At high frequencies, substrate effects significantly degrade gain and noise figure of LNA's. A new bond-pad structure presented here significantly reduces substrate effects in a 4.4-GHz LNA resulting in a 10-dB increase in gain and a better than 2-dB improvement in noise figure. The inter-pad isolation of the new bond-pad structure is as much as 30-dB better than that of the conventional bond-pads.
引用
收藏
页码:109 / 112
页数:4
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