Screening of point charges in Si quantum dots

被引：18

作者：

Franceschetti, A ^{[1
]}

Troparevsky, MC ^{[1
]}

机构：

[1] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.72.165311

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The screening of a point charge in hydrogenated Si quantum dots ranging in diameter from 10 angstrom to 26 angstrom has been studied using first-principles density-functional theory in the local density approximation. We find that the main contribution to the screening function originates from the electrostatic field set up by the polarization charges at the surface of the nanocrystals. We show that this contribution is well described by a classical electrostatics model of dielectric screening.

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页数：4

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