Ultra-low resistive ohmic contacts on n-GaN using Si implantation

Implanted ohmic contacts were made on molecular beam epitaxy grown GaN materials. Si was implanted at a doping density of about 4 x 10(20) cm(-3) to decrease the contact resistance of the contact, followed by an activation anneal at 1150 degrees C for 30 s. The overlay metal Ti/Au was evaporated. Four-probe measurements were performed on transmission line model patterns. The measured maximum contact resistance was 0.097 Omega mm and the apparent specific contact resistance was 3.6 x 10(-8) Omega cm(2). (C) 1997 American Institute of Physics.